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E clothing - father - 08-17-2017 The e-cloth is a type of cloth woven with conductive fibers and can be designed to support a variety of electronic components such as tiny circuits, sensors, and wireless communication devices,and like other kinds of fabrics, the electronic cloth can be possible to sewn many shapes, such as a bag or a tag..etc,Once fashioned into the appropriate device the cloth can be programmed to respond differently to a variety of situation,like If it were a bag used to secure a laptop computer made of e-cloth ,and the owner page link it via wireless technology to an already existing alarm system, which can sound off if the bag is moved or tampered, used to embed sensing, actuation and displays into clothing and surface coverings. and also can be used to embed sensing, actuation and displays into clothing and surface coverings. e-cloth built by plastic pentacene transistors directly on cloth fibers In a process that is compatible with textile manufacturing, the transistors were fabricated using a 125 m diameter aluminum wire as the gate line. In practice, this wire may be directly woven into an e-textile to serve as a gate interconnect. Interestingly, the transistors were fabricated without conventional lithography. Instead, accomplishing natural pattern of textiles patterning via shadowing from over-woven fibers. The fiber was masked with orthogonal over-woven 50 m diameter wires (Figure ). These served as channel masks; a transistor was formed at every intersection. 100 nm gold was evaporated to form source/drain contacts.and transistors were patterned via shadowing from over-woven fibers. The fiber was masked with orthogonal over-woven 50 m diameter wires.Upon removal of the over-woven fibers, arrays of transistors resulted, with a transistor formed at every intersection. All transistors were 125/50 m, since transistors were only formed on the surface of the gate wire exposed during pentacene evaporation. The resulting transistors are similar to conventional inverted top-contacted pentacene thin-film transistors (TFTs). However, the entire transistor was formed on a metallic gate wire, assuring easy e-textile integration. Electron mobilities were >0.01 cm2/V-sec at 20 V. E clothing - Shweta - 08-17-2017 As i am vinay b studying in final year engg.. in electronics and communication branch plz send some details of "E Clothing" E clothing - aruna - 08-17-2017 please read http://seminarsprojects.net/Thread-e-clothing--6945 for more about E Clothing |