08-16-2017, 10:35 PM
Resistive random-access memory (RRAM) is a new non-volatile memory type . Basic idea is that a dielectric, which is normally insulating can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage. Different forms of RRAM have been disclosed based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching