Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propos ....etc

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ABSTRACT
The shotgun marriage of chemistry and engineering called Nanotechnology is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to ampli ....etc

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OUTLINE
What are Transistors
What is a SET
How do SETs differ from the Conventional Transistors
Operation of SETs
Application of SETs
What is a Transistor
A transistor is a solid state semiconductor device which can be used for numerous purposes including signal modulation, signal amplification, voltage stabilization, and many other applications.

Transistors act like a variable valve which, based on its input current (BJT) or input voltage (FET), allow a precise amount of current to flow through it ....etc

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http://seminarsprojects.net/Thread-single-electron-tunneling-set-transistor?pid=70576&mode=threaded

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Single e device
Introduction
Theory
Operation
Adva ....etc

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Abstract
The goal of this paper is to review in brief the basic physics of single-electron devices, as
well as their current and prospective applications. These devices, based on the controllable
transfer of single electrons between small conducting islands, have already enabled several
important scientific experiments. Several other applications of analog single-electron devices in
unique scientific instrumentation and metrology seem quite feasible. On the other hand, the
prospect of silicon transistors being replaced by single- ....etc

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ABSTRACT
The shotgun marriage of chemistry and engineering called Nanotechnology is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to amplify current.
By using the Electr ....etc

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As I am having a mini project on a 3V fm transmitter using a single transistor i want some information about the same and the reports for my project.
please send me reports on this topics as i cant find any suitable information on this topic on internet. ....etc

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Small-signal modelling of the transistor laser including the quantum capture
and escape lifetimes



The transistor laser was rst introduced in , and it was
predicted that this device could have a high-speed modula-
tion bandwidth of up to 100 GHz . In the transistor laser
(TL), a quantum well (QW) is embedded in the base of the
bipolar junction transistor (BJT) and acts as an optical col-
lector. The stimulated recombination causes compression in
the I-V characteristics of t ....etc

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Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
Abstract:
Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in or ....etc

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Presented By:
Marcin Janicki*, Marcin Daniel, Michal Szermer, Andrzej Napieralski

Abstract
The proper design and simulation of modern electronic microsystems oriented towards environment monitoring requires accurate models of various ambient sensors. In particular, this paper presents a comprehensive model of an ion sensitive eld effect transistor (ISFET). The model can be employed straightforwardly for simulations at device, circuit or system level. First, the model was validated with electrical measurements and simulatio ....etc

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