Hai..
Im Jeya Sudha.K,pursuing my Masters in Engineering in Sethu Institute of Technology,virudhunagar,TamilNadu,India..My domain is Power Electronics & Drives..Im looking for the project papers related to my stream..and i wanna the complete paper of the topic Design modeling & simulation of SVC for 750km (?/8) transmission line..If it is available just mail me.Also i welcome any other project paper related to my stream.But i want the complete IEE base paper..

Warm wishes and regards
K.Jeya Sudha M.E
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Abstract
In this paper steady-state modeling of Static VAR Compensator (SVC) and Thyristor Controlled Series Compensator (TCSC) for power flow studies has been represented and discussed in details. Firing angle model for SVC was proposed to control the voltage at which it is connected. In same manner firing angle model for TCSC is used to control active power flow of the line to which TCSC is installed. The proposed models take firing angle as state variable in power flow formulation. To validate the effectiveness of the proposed models ....etc

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I Kodak.

I am want to find out, how does Static Var Compensator(SVC) employed to automatic control power quality and compensate for harmonic distortion problems.

I know a bit of basic operation reading SVC.

Current stage I have no clue, where to start and how.

Problem is drafting of conceptual design and control system regarding SVC and harmonic distortion.

I just want to find clue of the conceptual design for; adaption of SVC to control power quality and compensate for harmonic problems ....etc

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Master process control hands on, through practical examples and MATLABreg; simulations This is the first complete introduction to process control that fully integrates software tools-enabling professionals and students to master critical techniques hands on, through computer simulations based on the popular MATLAB environment. Process Control: Modeling, Design, and Simulation teaches the field's most important techniques, behaviors, and control problems through practical examples, supplemented by extensive exercises-with detailed derivations, r ....etc

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PERFORMANCE ANALYSIS OF SWITCHED RELUCTANCE
MOTOR; DESIGN, MODELING AND SIMULATION OF 8/6
SWITCHED RELUCTANCE MOTOR


Vikas S. Wadnerkar * Dr. G. TulasiRam Das ** Dr. A.D.Rajkumar
*Mr. Vikas S Wadnerkar is with Essar steel, Hazira, Surat as a Faculty Electrical Engineering and
**Dr. G. Tulasi Ram Das with JNTU College of Engineering , Hyderabad and
**Dr. Rajkumar are with College of Engineering, Osmania University, Hyderabad

ABSTRACT
The Switched reluctance Motor (SRM) is an old member of the E ....etc

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SECURE MESSAGE TRANMISSION IN A LAN

BY:

J.ANURAG (06BIT067)
KARTHIK V. (06BIT 081)
KRISHNA CHANDRA JAISWAL (06BIT082)
K. KUMARAN (06BIT085)
KRISHNAN MONI (06BIT093)

VIT
U N I V E R S I T Y
(Estd. u/s 3 of UGC Act 1956)
Vellore - 632 014, TN, India

School of Computing Sciences



ABSTRACT

The sole aim of this project is to provide secure transmission of any message in a network. The objective is to use RSA algorithm, which will be implemented in achieving this safe transmission. This will ....etc

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send ppt ....etc

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hello sir
I am ishtiaque kazmi of btech 4th yr,EE branch from Galgotias college.
my final yr project is svc statcom devices.
so I need some data of above project from ur side. ....etc

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PRESENTED BY:
Heemanshu das





INTRODUCTION
With the rapid development of power system, especially the increased use of transmission facilities due to higher industrial output and deregulation, it becomes necessary to explore new ways of maximizing power transfer in existing transmission facilities, while at the same time maintaining the acceptable levels of the network reliability and stability. On the other hand, the fast development of power electronic technology has mad ....etc

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Modeling and Simulation of Single-Event
Effects in Digital Devices and ICs
The modeling and simulation of single-event effects (SEE) in digital devices
and integrated circuits is discussed in this article.The physical modeling of ultra-scaled devices (in the deca-nanometer range) and new device architectures
(Silicon-on-insulator, multiple-gate, nanowire MOSFETs are given special emfhasis. The drift-diffusion, hydrodynamic, Monte-Carlo and the other transport models in the device-level simulation is first described. The effects suc ....etc

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