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1. Introduction

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials . Large strain induced gains in both electron and hole mobilities have been reported . In this article, we will ....etc

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FinFET technology
Multigate device or multigate device: multiple gate field-effect transistor (MuGFET) refers to the MOS transistor, which includes more than one valve in a single device.

FinFETs
This term refers to the neploskim, a double-Gate Transistor built on SOI substrate. based on the earlier DELTA (one goal) transistor design.This term was coined at the University of California, Berkeley, researchers. In conducting channel FinFETs wrapped around a thin silicon fin that forms the body of the appliance in the direction of effective ....etc

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Seminar on finFET technology

c0ntents
INTRODUCTION
PARTIALLY DEPLETED SOI

PARASITIC BIPOLAR EFFECT

SCALING FROM PD SOI TO FD SOI

MAJOR DESIGN ISSUES
FEATURES OF FINFET
PROCESS FLOW OF FINFET

APPLICATIONS OF FINFET

SIMULATION RESULTS
CONCLUSION
REFERENCES

Introduction:
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously.

The motivation behind this dec ....etc

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ful seminar report on plasmonics-a new device for technology
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Hi
I am D.Sathya studying final year M.E.VLSI design .I am doing my project titled design and simulation of FinFET for nanoscale devices.If anyone have idea on this topic send me your ideas and valuable information to my email [email protected] would be helpful if you send a coding for NAND logic using FinFET with model parameters for FinFET. ....etc

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Abstract
In this review, the primary FinFET framework is described, along with the reasons behind its release. The production actions are temporarily described. Lastly, some latest perform on FinFETs is provided, along with the excellent problems that individuals have been concentrating on.
Introduction
As gadgets get smaller further and further, the problems with traditional (planar) MOSFETs are improving. Market is currently at the 90nm node (ie. DRAM 50 percent steel message, which matches to checkpoint measures o ....etc

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