Hello sir/madam
i'm Arulraj doing B.E.(Mechanical),my main project topic is (FABRICATION OF REVOLVING GATE COMPRESSOR),if you get detailed report for this project.So send it to my Email-id ([email protected]).. ....etc

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igct

Thyristor technology is inherently superior to transistor for blocking voltage values above 2.5kV, plasma distributions equal to those of diodes offering the best trade-off between the on-state and blocking voltages. Until the introduction of newer power switches, the only serious contenders for high-power transportation systems and other applications were the GTO (thyristor), with its cumbersome snubbers, and the IGBT (transistor), with its inherently high losses. Until now, adding the gate turn-off feature has re ....etc

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An IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.

The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection from the lower PN junction and faster turn off times. The main difference is a redu ....etc

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To get full information or details of thyristor firing angle matlab please have a look on the pages

http://seminarsprojects.net/Thread-phase-angle-control-of-scr-using-at89c51?pid=42956

if you again feel trouble on thyristor firing angle matlab please reply in that page and ask specific fields in thyristor firing angle matlab ....etc

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I am looking for thyristor firing angle through microprocessor.please give some ideas with circuit diagram and programming..thanks.. ....etc

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The Integrated Gate Commutated Thyristor (IGCT) is a new high-power semiconductor device. IGCT is a special type of thyristor similar to a GTO. They can be turned on and off by a gate signal, have lower conduction loss as compared to GTOs, and withstand higher rates of voltage rise (dv/dt), such that no snubber is required for most applications.The structure of an IGCT is very similar to a GTO thyristor. In an IGCT, the gate turn off current is greater than the anode current. This results in a complete elimination of minority carrier injection ....etc

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Please send me the ppt of igct.While reading the report of igct i cann't find the circuits,waweform that described in report.so please send them immediately. ....etc

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Abstract-
In this paper, a new complementary gate driver for power metal-oxide semiconductor field-effect transistors and in sulated gate bipolar transistors is presented based on the use of a piezoelectric transformer (PT). This type of transformer has a high integration capability. Its design is based on a multilayer struc ture working in the second thickness resonance mode. A new de sign method has been used based on an analytical Mason model in order to optimize the efficiency, the available power at the trans former secondary ends, and ....etc

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integrated gate commutated thyristor igct ppt

The integrated gate-commutated thyristor (IGCT) is a power semiconductor electronic device, used for switching electric current in industrial equipment. It is related to the gate turn-off (GTO) thyristor. It was jointly developed by Mitsubishi and ABB.Like the GTO thyristor, the IGCT is a fully controllable power switch, meaning that it can be turned both on and off by its control terminal (the gate). Gate drive electronics are integrated with the thyristor device.

All ABB IGCTs (Integrated Gate-C ....etc

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ABSTRACT
The Integrated Gate Commutated Thyristor (IGCT) combines the advantages of the hard driven GTO thyristor, including its dramatically improved turn- off performance, with technological breakthroughs at the device, gate-drive and application levels. Homogenous switching area of the IGCT up to the dynamic avalanche limits. Snubber circuits are no longer needed. Improved loss characteristics allow high frequency applications extending into the kHz range. A new IGCT device ....etc

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