Silicon is a chemical element with symbol Si and atomic number 14. It is a tetravalent metalloid, more reactive than germanium, the metalloid directly below it in the table. Controversy about silicon's character dates to its discovery. It was first prepared and characterized in pure form in 1823. In 1808, it was given the name silicium (from Latin: silex, hard stone or flint), with an -ium word-ending to suggest a metal, a name which the element retains in several languages. The present English name was first suggested in 1817 to conform with t ....etc

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ABSTRACT

The plastic substrates are thinner, lighter, shatterproof, flexible, rollable and foldable, making Silicon-on-Plastic an enabling technology for new applications/products. This paper studies the development of Silicon on Plastic technology. Advances in poly-silicon technology have expanded TFT (THIN FILM TRANSISTORS) technology to high-speed electronics applications such as Smart Cards, RFID tags, portable imaging devices, photo-voltaic devices and solid-state lighting and other integrated ci ....etc

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ABSTRACT

The plastic substrates are thinner, lighter, shatterproof, flexible, rollable and foldable, making Silicon-on-Plastic an enabling technology for new applications/products. This paper studies the development of Silicon on Plastic technology. Advances in poly-silicon technology have expanded TFT (THIN FILM TRANSISTORS) technology to high-speed electronics applications such as Smart Cards, RFID tags, portable imaging devices, photo-voltaic devices and solid-state lighting and other integrated circuit functions.The challenge of Silicon-on ....etc

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A SONOS memory cell is formed from a standard polysilicon NMOS transistor with the addition of a small sliver of silicon nitride inserted inside the transistor's gate oxide. The sliver of nitride is non-conductive but contains a large number of charge trapping sites able to hold an electrostatic charge. The nitride layer is electrically isolated from the surrounding transistor, although charges stored on the nitride directly affect the conductivity of the underlying transistor channel. The oxide/nitride sandwich typically consists of a 2 nm thi ....etc

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