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Title: Single-Electron Transistor SET Process and Device Simulation Using SYSNOPSYS TCAD
Page Link: Single-Electron Transistor SET Process and Device Simulation Using SYSNOPSYS TCAD -
Posted By: shilpa
Created at: Thursday 17th of August 2017 08:08:24 AM
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Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools
Abstract:
Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in or ....etc

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Title: Nanoelectronics single electron transistor
Page Link: Nanoelectronics single electron transistor -
Posted By: dhaneesh
Created at: Thursday 05th of October 2017 03:57:55 AM
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ABSTRACT
The shotgun marriage of chemistry and engineering called Nanotechnology is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to amplify current.
By using the Electr ....etc

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Title: single electron devices and their applications ppt
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Posted By: nishawilson
Created at: Thursday 05th of October 2017 04:34:48 AM
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Single e device
Introduction
Theory
Operation
Adva ....etc

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Title: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors
Page Link: Compact Current and Current Noise Models for Single-Electron Tunneling Transistors -
Posted By: zubair
Created at: Friday 06th of October 2017 02:46:52 PM
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Abstract
This paper presents an analytic current model for capacitively coupled Single-Electron Tunneling Transistors (SETTs) that is based on a modified M-state steady-state master equation. Based on this current model we also derive a current noise model for SETT. To validate the proposed models we calculate their characteristics at different device parameters and different operation temperatures and compare them with the corresponding characteristics calculated by the full master equation method. The results indicate that the propos ....etc

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Title: conventional tunneling full report
Page Link: conventional tunneling full report -
Posted By: eyeman
Created at: Thursday 17th of August 2017 05:25:01 AM
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SEMINAR ON-
CONVENTIONAL TUNNELLING
PRESENTED BY-
Namrata M. Lolge (09CM16F)
M. Tech. 1st sem
NITK
TUNNELLING TECHNIQUES



DEFINITION

A definition of Conventional Tunnelling can be the construction of underground openings of any shape with a cyclic construction process of-
1. excavation, by using the drill and blast methods or mechanical excavators (except any full face TBM)
2. mucking
3. placement of the primary support elements such as-
-steel ribs or lattice girders
-s ....etc

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Title: Single electron tunneling SET transistor
Page Link: Single electron tunneling SET transistor -
Posted By: chitra
Created at: Thursday 17th of August 2017 04:46:02 AM
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OUTLINE
What are Transistors
What is a SET
How do SETs differ from the Conventional Transistors
Operation of SETs
Application of SETs
What is a Transistor
A transistor is a solid state semiconductor device which can be used for numerous purposes including signal modulation, signal amplification, voltage stabilization, and many other applications.

Transistors act like a variable valve which, based on its input current (BJT) or input voltage (FET), allow a precise amount of current to flow through it ....etc

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Title: Numerical modeling of tunneling
Page Link: Numerical modeling of tunneling -
Posted By: reshmi raju
Created at: Thursday 17th of August 2017 08:04:33 AM
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ABSTRACT:
The finite element program CRItical State Program (CRISP) has been used to model the New Austrian Tunneling Method (NATM) in London Clay. The non-linear behavior of the London Clay was modeled by a Strain Dependent Modified Cam Clay (SDMCC) model and the tunnel lining was modeled by constant and time-dependent classic models. The construction process was modeled in two and three dimensions by removing soil elements in sequence. The tunnel lining was either assumed wished-in-place or introduced after the excavation of each pan ....etc

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Title: Single-Electron Devices and Their Applications
Page Link: Single-Electron Devices and Their Applications -
Posted By: farhu
Created at: Thursday 05th of October 2017 04:13:27 AM
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Abstract
The goal of this paper is to review in brief the basic physics of single-electron devices, as
well as their current and prospective applications. These devices, based on the controllable
transfer of single electrons between small conducting islands, have already enabled several
important scientific experiments. Several other applications of analog single-electron devices in
unique scientific instrumentation and metrology seem quite feasible. On the other hand, the
prospect of silicon transistors being replaced by single- ....etc

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Title: 3v fm transmitter using single transistor
Page Link: 3v fm transmitter using single transistor -
Posted By: imrancenakk
Created at: Thursday 17th of August 2017 05:21:39 AM
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Title: Nano electron transistor
Page Link: Nano electron transistor -
Posted By: charancm
Created at: Thursday 05th of October 2017 03:23:19 AM
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ABSTRACT
The shotgun marriage of chemistry and engineering called Nanotechnology is ushering in the era of self-replicating machinery and self-assembling consumer goods made from raw atoms. Utilizing the well understood chemical properties of atoms & molecules, nanotechnology proposes the construction of novel molecular devices possessing extraordinary properties. The single electron transistor or SET is a new type of switching device that uses controlled electron tunneling to ampli ....etc

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