1. INTRODUCTION
Imagine having a high-definition TV that is 80 inches wide and less than a quarter-inch thick, consumes less power than most TVs on the market today and can be rolled up when you're not using it. What if you could have a heads up display in your car? How about a display monitor built into your clothing? These devices may be possible in the near future with the help of a technology called organic light-emitting diodes (OLEDs). OLED is a flat display technology, made by placing a series of organic t ....etc

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gunn diode report for technical seminar pdf

Abstract

A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal passive semiconductor electronic component, with negative resistance, used in high-frequency electronics. It is based on the Gunn effect discovered in 1962 by physicist J. B. Gunn. Its largest use is in electronic oscillators to generate microwaves, in applications such as radar speed guns and microwave relay data page link transmitters.

Introduction

Its internal construction is unlike ot ....etc

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construction and working of impatt diode pdf

Abstract

In many respects, the IMPATT diode structure is very similar to that of many other forms of diode, and in particular the standard PN junction diode or the Schottky diode.However the differences in its construction and fabrication mean that it is able to operate in its avalanche mode whether the transit time provides the negative resistance.
There is a variety of structures that are used for the IMPATT diode. All are variations of a basic PN junction and usually there is an intrinsic layer, ....etc

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Presented By:Name:- SABYASACHI SABAT
Stream:- ETE
IMPATT Diode

Introduction
When the pn junction diode is reverse-biased, then current does not flow.
However when the reverse voltage exceeds a certain value, the junction breaks down and current flows with only slight increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche b ....etc

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Diode Clamped Multilevel Inverter Fed Induction Motor


INTRODUCTION

Two level voltage source inverters produce an output voltage or a current with levels either 0 or Vdc

In high power and high voltage application these two level inverters, however, have some limitations in operating at high frequency mainly due to switching losses and constraints of device ratings.

Unique structure of ML-VSIs allow them to reach high voltages with low-harmonics without use of transformers ....etc

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To get full information or details of viva questions pn junction diode with answers please have a look on the pages

http://seminarsprojects.net/Thread-pn-junction-diode-viva-questions

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Electrical Characteristics of n-ZnO/p-Si Heterojunction Diodes
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Grown by Pulsed Laser Deposition at Different Oxygen
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Pressures
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R.S. AJIMSHA,
1
M.K. JAYARAJ,
1,3
and L.M. KUKREJA
2
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1. Optoelectronics Devices Laboratory, Department of Physics, Cochin University of Science and
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Technology, Kochi 682022, India. 2. Laser Materials Processing Division, Raja Ramanna Centre
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for Advanced Technology, Indore 452013, India. 3. e-mail: [email protected]
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Heterojunction diodes of n-type ZnO/p-type silicon (100) were fabric ....etc

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