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gunn diode report for technical seminar pdf

Abstract

A Gunn diode, also known as a transferred electron device (TED), is a form of diode, a two-terminal passive semiconductor electronic component, with negative resistance, used in high-frequency electronics. It is based on the Gunn effect discovered in 1962 by physicist J. B. Gunn. Its largest use is in electronic oscillators to generate microwaves, in applications such as radar speed guns and microwave relay data page link transmitters.

Introduction

Its internal construction is unlike ot ....etc

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1. INTRODUCTION
Imagine having a high-definition TV that is 80 inches wide and less than a quarter-inch thick, consumes less power than most TVs on the market today and can be rolled up when you're not using it. What if you could have a heads up display in your car? How about a display monitor built into your clothing? These devices may be possible in the near future with the help of a technology called organic light-emitting diodes (OLEDs). OLED is a flat display technology, made by placing a series of organic t ....etc

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construction and working of impatt diode pdf

Abstract

In many respects, the IMPATT diode structure is very similar to that of many other forms of diode, and in particular the standard PN junction diode or the Schottky diode.However the differences in its construction and fabrication mean that it is able to operate in its avalanche mode whether the transit time provides the negative resistance.
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This light detector is a current-to-voltage converter. The FET input op-amp prevents the loading of the photodiode and the voltage at the output is proportional to the current in the photodiode. So long as the photodiode response to the light is linear, the output voltage is proportional to the light falling on the photodiode. ....etc

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Presented By:Name:- SABYASACHI SABAT
Stream:- ETE
IMPATT Diode

Introduction
When the pn junction diode is reverse-biased, then current does not flow.
However when the reverse voltage exceeds a certain value, the junction breaks down and current flows with only slight increase of voltage. This breakdown is caused by avalanche multiplication of electrons and holes in the space charge region of the junction.
The pn junction in the avalanche b ....etc

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