ppt & seminar report on transparent resistive random access memory ....etc

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You hit the power button on your television and it instantly comes to life. But do the same thing with your computer and you have to wait a few minutes while it goes through its boot-up sequence. Why can't we have a computer that turns on as instantly as a television or radio? IBM, in cooperation with Infenion, is promising to launch a new technology that will eliminate the boot-up process. Magnetic random access memory (MRAM) has the potential to store more data, access that data faster and use less power than current memory technologies.

D ....etc

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INTRODUCTION

In 1984 Drs. Arthur Pohm and Jim Daughton, both employed at that time by Honeywell, conceived of a new class of magnetoresistance memory devices which offered promise for high density, random access, nonvolatile memory. In 1989 Dr. Daughton left Honeywell to form Nonvolatile Electronics, Inc. having entered into a license agreement allowing him to sublicense Honeywell MRAM technology for commercial applications. Dr. Pohm, Dr. Daughton, and others at NVE continued to improve basic MRAM technol ....etc

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Magnetic Random Access Memories (M-RAM) : A truly universal memory


Introduction
Recent developments in the physics of spin electronics (see Inset) have enabled the
emergence of a new class of non-volatile memories, Magnetic Random Access Memories
(MRAM). MRAM combine on paper all the virtues of current silicon-based memories: speed,
density, non-volatility, low power consumption, radiation hardness and endurance (see Table
1). The first target for MRAM is replacement of Flash ....etc

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Resistive random-access memory (RRAM) is a new non-volatile memory type . Basic idea is that a dielectric, which is normally insulating can be made to conduct through a filament or conduction path formed after application of a sufficiently high voltage. The conduction path formation can arise from different mechanisms, including defects, metal migration, etc. Once the filament is formed, it may be reset (broken, resulting in high resistance) or set (re-formed, resulting in lower resistance) by an appropriately applied voltage. Different forms o ....etc

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I want to present this ppt in my college. i want to know much about this. ....etc

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It is a step towards a new breed of computer chips that couple memory with information processing. Such chips retain data when computer is turned off, eliminating the time-consuming process of booting up information from hard drive to processor. If we can make semiconductor based magnetic memories when we turn on computer it would be like a TV set-all information will be there with no need for reloading the operating system. All spintronic computers eliminate the need for parallel processing. Computing could be accelerated and customized with r ....etc

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Dynamic random-access memory (DRAM) is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit. The capacitor can be either charged or discharged .these two states are taken to represent the two values of a bit, conventionally called 0 and 1. Since capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically.The advantage of DRAM is its structural simplicity. only one transistor and a capacitor are required per bit, compared to six transis ....etc

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To get more information about the topic random access memory please refer the page link below

http://seminarsprojects.net/Thread-magnetic-ram-full-report?page=2
http://seminarsprojects.net/Thread-nano-ram-seminars-presentation

http://seminarsprojects.net/Thread-magnetic-ram-full-report ....etc

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Magnetic Random Access Memory

MRAM is a nonvolatile random access memory which uses magnetic storage and magnetoresistance (MR) to read the stored data. Magnetoresistive material is a resistor made of common ferromagnetic material which will change in resistance in the presence of a magnetic field. The magnetoresistive property gives a small but sufficient signal to distinguish between a 1 and 0. MRAM results from combining MR storage elements with standard semiconductor fabrication processes. The magnetic devices a ....etc

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