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Title: DYNAMIC MEMORY ACCESS MANAGEMENT FOR HIGH PERFORMANCE DSP APPLICATIONS USING HIGH-LE
Page Link: DYNAMIC MEMORY ACCESS MANAGEMENT FOR HIGH PERFORMANCE DSP APPLICATIONS USING HIGH-LE -
Posted By: paulu888
Created at: Thursday 05th of October 2017 04:31:04 AM
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DYNAMIC MEMORY ACCESS MANAGEMENT FOR HIGH PERFORMANCE DSP APPLICATIONS USING HIGH-LEVEL SYNTHESIS
PRESENTED BY:NIRMAL JOSEPH
S7 ECE
College Of Engineering, Trivandrum
2007-11 batch



OUTLINE
INTRODUCTION.
TARGETTED ARCHITECTURE.
HIGH LEVEL SYNTHESIS.
DESIGN FLOW.
CONCLUSION.
REFERENCES.

DYNAMIC MEMORY ACCESS(DMA)
Also called indeterminate access sequence.
A part of data is not known before the execution of the application.
Memory accesses are computed during the ex ....etc

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Title: Improving Delay-Tolerant Network Performance Using Forward Routing Information
Page Link: Improving Delay-Tolerant Network Performance Using Forward Routing Information -
Posted By: arunaswetapadma
Created at: Thursday 17th of August 2017 07:00:12 AM
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Improving Delay-Tolerant Network Performance Using Forward Routing Information (Java)
Proceedings of IEE INFOCOM

The development of delay-tolerant networks (DTNs) has attracted significant attention in the recent years. The concept started with the idea of interplanetary internet and later the DTN Research Group (DTNRG) took up the work concerning the architectural and protocol design principles for the DTNs. A DTN can be regarded as a group of highly disconnected networks/regions where the communication environment may be far from ideal w ....etc

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Title: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL
Page Link: IMPLEMENTATION OF SRAM USING MICRO WIND TOOL -
Posted By: danybabu2004
Created at: Thursday 05th of October 2017 05:17:03 AM
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ABSTRACT


Data storage is a growing need in these days. With the advent of new technologies the concept of more data in less space is gaining importance day by day.

Most commonly used semiconductor memory is SRAM. Static Random Access Memory (SRAM) is a type of semiconductor memory where the word static indicates that unlike Dynamic RAM (DRAM) it does not need to be periodically refreshed, as SRAM is volatile in the conventional sense that data is eventually ....etc

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Title: advantages and disadvantages of 6t sram
Page Link: advantages and disadvantages of 6t sram -
Posted By: preity
Created at: Thursday 17th of August 2017 04:57:20 AM
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To get information about the topic 6T SRAM full report ppt and related topic refer the page link below

6T SRAM Cell

Static random access memory (SRAM) can retain its stored information as long as power is supplied. This is in contrast to dynamic RAM (DRAM) where periodic refreshes are necessary or non-volatile memory where no power needs to be supplied for data retention, as for example flash memory. The term random access'' means that in an array of SRAM cells each cell can be read or written in any order, no matter which cell ....etc

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Title: low power high performance 1 bit full adder cell
Page Link: low power high performance 1 bit full adder cell -
Posted By: kadesh s b
Created at: Thursday 17th of August 2017 06:52:30 AM
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to get information about the topic low power high performance 1 bit related topic refer the page link bellow

http://seminarsprojects.net/Thread-a-low-power-small-area-1-bit-full-adder-cell-in-a-0-35%CE%BCm-cmos-technology-for-biomedic?pid=39137&mode=threaded ....etc

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Title: Low power and high speed multiplication design through mixed number representation
Page Link: Low power and high speed multiplication design through mixed number representation -
Posted By: suhail123
Created at: Thursday 17th of August 2017 04:52:50 AM
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Low power and high speed multiplication design through mixed number representation


Apeksha Reddy, VI Sem, SDMCET, Dharwad
Ashroo M Das, VI Sem, SDMCET, Dharwad



Contents

INTRODUCTION
THE ALGORITHM AND ITS VLSI ARCHITECTURE
CONVERSION FROM TWO S COMPLEMENT TO SM NOTATION
RADIX-4 BOOTH S ALGORITHM
SPEEDING UP THE PP ACCUMULATION
CONVERTING THE RB NUMBER INTO TWO S COMPLEMENT NUMBER
CONCLUSION
REFRENCES
ACKNOWLEDGEMENT

What is a multiplication ?
How is multiplication done?
With what speed is ....etc

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Title: Low power and high performance sram design using bank-based selective forward body b
Page Link: Low power and high performance sram design using bank-based selective forward body b -
Posted By: rohini
Created at: Thursday 05th of October 2017 03:51:59 AM
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ABSTRACT

Leakage power consumption is large fraction of the total power consumption in contemporary VLSI designs. Since memories occupy a large portion of the total area of many high-performance ICs, it is crucial to reduce the leakage energy of memories. This problem is particularly aggravated for memories implemented in the 45nm technology node, since these processes exhibit significantly higher leakage power. For these memories, leakage is a significant problem not only from a power point of view, but also from performance degradation st ....etc

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Title: OPTIMIZATION OF CURE CYCLE TIME OF A BIAS TRUCK LUG TYRE BY STUDYING THE CURE EQUIVA
Page Link: OPTIMIZATION OF CURE CYCLE TIME OF A BIAS TRUCK LUG TYRE BY STUDYING THE CURE EQUIVA -
Posted By: maaz
Created at: Thursday 05th of October 2017 05:34:06 AM
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OPTIMIZATION OF CURE CYCLE TIME OF A BIAS TRUCK LUG TYRE BY STUDYING THE CURE EQUIVALENTS IN ISOTHERMAL AND NON-ISOTHERMAL CONDITIONS

INTRODUCTION
Curing is a process in which the viscoelastic rubber is converted into three-dimensional networks by tying up of all independent chains. Uncured rubber is a viscoelastic fluid, which has poor physical properties and undergoes deformation easily. Curing process reduces the flow of rubber material. And also reduces the amount of permanent deformation after the removal of deforming for ....etc

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Title: monolithic 65-nm 144-Mbit SRAM
Page Link: monolithic 65-nm 144-Mbit SRAM -
Posted By: james
Created at: Thursday 05th of October 2017 04:05:26 AM
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Fastest Clock Speed up to 550 MHz and Total Data Rate up to 80
Gbps; Dramatically Expanding the Performance of Networking and Signal Processing
Applications Compared with 90-nm SRAMs, Cypress s 65-nm QDR and DDR SRAMs offer up to 50% lower standby and dynamic current consumption, enabling the new wave of green networking infrastructure applications. The QDRII+ and DDRII+ devices have
On-Die Termination (ODT), which improves signal integrity, reduces system cost,
and saves board space by eliminating external termination resistors. The 65-n ....etc

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Title: A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation
Page Link: A 256-kb 65-nm Sub-threshold SRAM Design for Ultra-Low-Voltage Operation -
Posted By: manmadanarun
Created at: Thursday 17th of August 2017 08:45:16 AM
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Benton Highsmith Calhoun, Member, IEE, and Anantha P. Chandrakasan, Fellow, IEE

Abstract
Low-voltage operation for memories is attractive because of lower leakage power and active energy, but the challenges of SRAM design tend to increase at lower voltage. This paper explores the limits of low-voltage operation for traditional six transistor (6 T) SRAM and proposes an alternative bitcell that functions to much lower voltages. Measurements confirm that a 256-kb 65-nm SRAM test chip using the proposed bitcell operates into ....etc

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