CMOS IC technology


inroduction

We are now living in a world driven by various electronic
equipments. Semiconductors form the fundamental building blocks
of the modern electronic world providing the brains and the memory
of products all around us from washing machines to super
computers. Semi conductors consist of array of transistors with each
transistor being a simple switch between electrical 0 and 1. Now
often bundled together in there 10 s of millions they form highly
complex, intelligent, re ....etc

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MEDICAL NANOROBOTS USING CMOS TECHNOLOGY



NANOROBOTICS

Nanorobotics is the technology of creating machine or robots at or close to the scale of nanometre(10-9)

NANOROBOTS
Nanorobots(Nanobots,Nanoids,Nanitesor Nanomites)would typically be devices ranging in size from 0.1 to 10 micrometer and constructed of nanoscale or molecular components.

MANUFACTURING TECHNOLOGY

CMOS Based Technology
High precision
Commercial way for manufacturing
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NMOS - N-type metal-oxide-semiconductor logic uses n-type field effect transistors (MOSFETs) to implement logic gates and other digital circuits. These nMOS transistors operate by creating an inversion layer in a p-type transistor body. This inversion layer, called the n-channel, can conduct electrons between n-type source and drain terminals. The n-channel is created by applying voltage to the third terminal, called the gate. Like other MOSFETs, nMOS transistors have four modes of operation: cut-off (or sub-threshold), triode, saturation ....etc

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1. Introduction

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials . Large strain induced gains in both electron and hole mobilities have been reported . In this article, we will ....etc

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Abstract
In view of changing the type of energy conversion inCMOS circuits, this paper investigates low power CMOScircuit design which adopts gradually changing powerclock. First, we discuss the algebraic expressions and thecorresponding properties of clocked power signals, then aclocked CMOS gate structure is presented. The PSPICEsimulations demonstrate the low power characteristic ofclocked CMOS circuits using trapezoidal power-clock.Finally, this paper also explores the design of sequentialcircuit, which adopts flip-flop with clocked ....etc

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Due to their unique electronic and optical properties,
semiconductor nanowires have been the subject of extensive
research as potential building blocks for a variety of
electronic,1 photonic,2 and biomedical3 applications. Because
of the high surface area to volume ratio in nanoscale devices,
surface effects become important, and even dominant, in
their influence on electronic transport4 and optical behavior.5
While these effects can be desirable in some applications
such as highly sensitive photodetectors6 or chemical and biological
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