Due to their unique electronic and optical properties,
semiconductor nanowires have been the subject of extensive
research as potential building blocks for a variety of
electronic,1 photonic,2 and biomedical3 applications. Because
of the high surface area to volume ratio in nanoscale devices,
surface effects become important, and even dominant, in
their influence on electronic transport4 and optical behavior.5
While these effects can be desirable in some applications
such as highly sensitive photodetectors6 or chemical and biological
s ....etc

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To get full information or details of finfet please have a look on the pages

http://seminarsprojects.net/Thread-finfet-technology--505?page=2

http://seminarsprojects.net/Thread-finfet-technology-seminar-report

http://seminarsprojects.net/Thread-finfet-technology--2017

http://seminarsprojects.net/Thread-finfet-technology--505?pid=57171

if you again feel trouble on finfet please reply in that page and ask specific fields in finfet ....etc

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Abstract


A multidisciplinary team of end users and suppliers has collaborated to develop a novel yet broadly enabling process for the design, fabrication and assembly of Micro-Opto-Electro-Mechanical Systems (MOEMS). A key goal is to overcome the shortcomings of the polysilicon layer used for fabricating optical components in a conventional surface micromachining process. These shortcomings include the controllability and uniformity of material stress that is a major cause of curvature and deformation in released microstructures. The appr ....etc

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please I want to ask how I can make CMOS inverter using silvaco
thanks a lot ....etc

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Seminar on finFET technology

c0ntents
INTRODUCTION
PARTIALLY DEPLETED SOI

PARASITIC BIPOLAR EFFECT

SCALING FROM PD SOI TO FD SOI

MAJOR DESIGN ISSUES
FEATURES OF FINFET
PROCESS FLOW OF FINFET

APPLICATIONS OF FINFET

SIMULATION RESULTS
CONCLUSION
REFERENCES

Introduction:
Since the fabrication of MOSFET, the minimum channel length has been shrinking continuously.

The motivation behind this dec ....etc

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FinFET technology
Multigate device or multigate device: multiple gate field-effect transistor (MuGFET) refers to the MOS transistor, which includes more than one valve in a single device.

FinFETs
This term refers to the neploskim, a double-Gate Transistor built on SOI substrate. based on the earlier DELTA (one goal) transistor design.This term was coined at the University of California, Berkeley, researchers. In conducting channel FinFETs wrapped around a thin silicon fin that forms the body of the appliance in the direction of effective ....etc

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Hi
I am D.Sathya studying final year M.E.VLSI design .I am doing my project titled design and simulation of FinFET for nanoscale devices.If anyone have idea on this topic send me your ideas and valuable information to my email [email protected] would be helpful if you send a coding for NAND logic using FinFET with model parameters for FinFET. ....etc

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ABSTRACT

This paper provides an introduction to silicon-on-insulator (SOI) technology and the operating principles of high-voltage SOI devices, reviews the performance of the available SOI switching devices in comparison with standard silicon devices, discusses the reasoning behind the use of SOI technology in power applications and covers the most advanced novel power SOI devices proposed to date. The impact of SOI technology on power integrated circuits (PICs) and the problems associated with the integration of high-voltage and low- ....etc

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Silicon on insulator technology (SOI) refers to the use of a layered silicon-insulator-silicon substrate in place of conventional silicon substrates in semiconductor manufacturing, especially microelectronics, to reduce parasitic device capacitance and thereby improving performance SOI-based devices differ from conventional silicon-built devices in that the silicon junction is above an electrical insulator, typically silicon dioxide or (less commonly) sapphire. The choice of insulator depends largely on intended application, with sapphire being ....etc

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1. Introduction

In modern semiconductor devices, the effects of physical lattice strain are playing an increasingly important role. One reason for this is that as device dimensions have shrunk, strains due to lattice mismatch or differences in thermal expansion have become more prevalent. Another is that strain has become an important tool in modifying and enhancing the electrical properties of the semiconductor materials . Large strain induced gains in both electron and hole mobilities have been reported . In this article, we will ....etc

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