Thyristor RAM ('T-RAM) is a new type of DRAM computer memory invented and developed by T-RAM Semiconductor, which departs from the usual designs of memory cells, combining the strengths of the DRAM and SRAM: high speed and high volume. This technology exploits the electrical property known as negative differential resistance and is called thin capacitively-coupled thyristor used to create memory cells capable of very high packing densities. This memory is highly scalable and already has a storage density that is several times higher than found ....etc

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You hit the power button on your television and it instantly comes to life. But do the same thing with your computer and you have to wait a few minutes while it goes through its boot up sequence. Why can t we have a computer that turns on as instantly as a television or radio? IBM, in cooperation with Infineon, is promising to launch a new technology in the next few years that will eliminate the boot-up process. Magnetic random access memory (MRAM) has the potential to store more data, access that data faster and use less power than current me ....etc

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ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor m ....etc

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Nano Ram - Seminar Presentation

Nano-RAM, is a proprietary computer memory technology from the company Nantero and NANOMOTOR is invented by University of bologna and California nano systems.NRAM is a type of nonvolatile random access memory based on the mechanical position of carbon nanotubes deposited on a chip-like substrate. In theory the small size of the nanotubes allows for very high density memories.

Nantero also refers to it as NRAM in short, but this acronym is also commonly used as a synonym for the more co ....etc

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Ferroelectric RAM

abstract

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cy ....etc

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Zero-capacitor (Z-RAM) is a novel DRAM computer memory technology .Based on the floating body effect of silicon on insulator (SOI) process technology. Z-RAM has been licensed by Advanced Micro Devices for possible use in future microprocessors. This technology offers memory access speeds similar to the standard six-transistor SRAM cell used in cache memory but uses only a single transistor, therefore affording much higher packing densities.Z-RAM relies on the floating body effect, an artifact of the SOI process technology which places transisto ....etc

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Ferroelectric memory is type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that pr ....etc

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INTRODUCTION

Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM s, EEPROM s, and FRAM s). Ferromagnetic cores, ....etc

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To get full information or details of ad hoc wireless network please have a look on the pages

http://seminarsprojects.net/Thread-opportunistic-routing-for-wireless-ad-hoc-and-sensor-networks-present-and-future

http://seminarsprojects.net/Thread-seminar-report-on-adaptive-routing-in-adhoc-networks?pid=2894&mode=threaded

if you again feel trouble on ad hoc wireless network please reply in that page and ask specific fields in ad hoc wireless network ....etc

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