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Title: Ferroelectric RAM
Page Link: Ferroelectric RAM -
Posted By: Shweta
Created at: Thursday 05th of October 2017 03:43:47 AM
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Ferroelectric RAM


abstract

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cy ....etc

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Title: strata flash memory
Page Link: strata flash memory -
Posted By: preetk89
Created at: Thursday 17th of August 2017 04:43:08 AM
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Title: FERROELECTRIC MEMORY
Page Link: FERROELECTRIC MEMORY -
Posted By: rakesh.mourya24
Created at: Thursday 05th of October 2017 05:18:47 AM
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Ferroelectric memory is type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that pr ....etc

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Title: Ferroelectric Random Access Memory
Page Link: Ferroelectric Random Access Memory -
Posted By: manasa
Created at: Thursday 17th of August 2017 08:30:13 AM
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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor m ....etc

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Title: disadvantages of ovonic unified memory
Page Link: disadvantages of ovonic unified memory -
Posted By: sneha varghese
Created at: Thursday 17th of August 2017 07:00:12 AM
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Title: advantages and disadvantages of memory segmentation of 8086
Page Link: advantages and disadvantages of memory segmentation of 8086 -
Posted By: bineet
Created at: Thursday 05th of October 2017 04:20:48 AM
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Process management refers to the full spectrum of as services to support the orderly administration of a collection of processes. The processor manager is responsible for creating the environment in which the sequential process executes, including implementing resource management.

The community of processes that exists in the as at any given time is derived from the initial process that is created when the computer begins operation. The initial process boots up the as , which, in turn, can create other processes to service interactive users, ....etc

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Title: ferroelectric ram seminars report
Page Link: ferroelectric ram seminars report -
Posted By: ravishankar
Created at: Thursday 05th of October 2017 05:02:27 AM
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ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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Title: A Phase Change Memory as a Secure Main Memory
Page Link: A Phase Change Memory as a Secure Main Memory -
Posted By: Pravin.pbw
Created at: Thursday 05th of October 2017 03:55:09 AM
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A Phase Change Memory as a Secure Main Memory
A Seminar Report
by
Abdul Nassar A A
M105101
Department of Computer Science & Engineering
College of Engineering Trivandrum
Kerala - 695016
2010-11



Contents
1 Introduction 5
2 PCM Technology 6
2.1 History and background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Memory cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Operation . . . . . . . . . . . ....etc

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Title: Virtual memory
Page Link: Virtual memory -
Posted By: kadi
Created at: Thursday 17th of August 2017 04:47:05 AM
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Title: Ferroelectric memory Download Full Report And Abstract
Page Link: Ferroelectric memory Download Full Report And Abstract -
Posted By: sahilkansal88
Created at: Thursday 17th of August 2017 05:36:21 AM
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INTRODUCTION

Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM s, EEPROM s, and FRAM s). Ferromagnetic cores, ....etc

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