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INTRODUCTION

Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM s, EEPROM s, and FRAM s). Ferromagnetic cores, ....etc

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Ferroelectric memory is type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that pr ....etc

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ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor m ....etc

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A Phase Change Memory as a Secure Main Memory
A Seminar Report
by
Abdul Nassar A A
M105101
Department of Computer Science & Engineering
College of Engineering Trivandrum
Kerala - 695016
2010-11



Contents
1 Introduction 5
2 PCM Technology 6
2.1 History and background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Memory cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Operation . . . . . . . . . . . ....etc

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Title: Ferroelectric RAM
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Ferroelectric RAM


abstract

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cy ....etc

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