ABSTRACT
Ferroelectric memory is a new type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor ....etc

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Ferroelectric Random Access Memory
Abstract
Ferroelectric Random Access Memory Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor m ....etc

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BY CHINMAYEE BAITHARU

WHAT S THE NEW BUZZ
Holographic memory is developing technology that has promised to revolutionalise the storage systems.
It can store data upto 1 Tb in a sugar cube sized crystal. Data from more than 1000 CDs can fit into a holographic memory System.
Holographic data storage systems use the volume to store data. It is based on the principle of holography

WHAT IS HOLOGRAPHY?

Holography was invented in 1947 by the Hungarian-British ph ....etc

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1. INTRODUCTION
Imagine a time when your mobile will be your virtual assistant and will need far more than the 8k and 16k memory that it has today, or a world where laptops require gigabytes of memory because of the impact of convergence on the very nature of computing. How much space would your laptop need to carry all that memory capacity Not much, if Intel's project with Thin Film Electronics ASA (TFE) of Sweden works according to plan. TFE's idea is to use polymer memory modules rather than silicon-based memory modu ....etc

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A Phase Change Memory as a Secure Main Memory
A Seminar Report
by
Abdul Nassar A A
M105101
Department of Computer Science & Engineering
College of Engineering Trivandrum
Kerala - 695016
2010-11



Contents
1 Introduction 5
2 PCM Technology 6
2.1 History and background . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.2 Memory cell . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
2.3 Operation . . . . . . . . . . . ....etc

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INTRODUCTION

Before the 1950 s, ferromagnetic cores were the only type of random-access, nonvolatile memories available. A core memory is a regular array of tiny magnetic cores that can be magnetized in one of two opposite directions, making it possible to store binary data in the form of a magnetic field. The success of the core memory was due to a simple architecture that resulted in a relatively dense array of cells. This approach was emulated in the semiconductor memories of today (DRAM s, EEPROM s, and FRAM s). Ferromagnetic cores, ....etc

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Random access memory (RAM) is the best known form of computer memory. RAM is considered random access because you can access any memory cell directly if you know the row and column that intersect at that cell.

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Downlaod

Mirror ....etc

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,
Ferroelectric RAM

abstract

Ferroelectric RAM (FeRAM or FRAM) is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number (exceeding 1016 for 3.3 V devices) of write-erase cy ....etc

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Ferroelectric memory is type of semiconductor memory, which exhibit short programming time, low power consumption and nonvolatile memory, making highly suitable for application like contact less smart card, digital cameras which demands many memory write operations.
A ferroelectric memory technology consists of a complementary metal-oxide-semiconductor (CMOS) technology with added layers on top for ferroelectric capacitors. A ferroelectric memory cell has at least one ferroelectric capacitor to store the binary data, and one transistor that pr ....etc

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ABSTRACT
Nowadays, digital memories are used in each and every fields of day-to-day life. Semiconductors form the fundamental building blocks of the modern electronic world providing the brains and the memory of products all around us from washing machines to super computers. But now we are entering an era of material limited scaling. Continuous scaling has required the introduction of new materials.
Current memory technologies have a lot of limitations. The new memory technologies have got all the good attributes for a ....etc

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